Business Wire

Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...
Electronic Design

Make the Most of Your GaN Designs (Download)

Gallium-nitride (GaN) wide-bandgap (WBG) semiconductor devices enable higher power density and efficiency than do silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) or insulated-gate ...
Electronic Design

What’s The Difference Between GaAs And GaN RF Power Amplifiers? (.PDF Download)

The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices are ...
Yahoo Finance

Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

Three New Devices Bring SuperGaN’s Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint ...
Finanznachrichten

Transphorm, Inc.: Transphorm's TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

Three New Devices Bring SuperGaN's Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint ...