Engineers at MIT have demonstrated that vertical three-dimensional transistor architectures, built with features as small as ...

The EPC8010 power transistor, sold in die form, measures 1.75 mm 2 with 100 VDS. Optimized for high speed switching, the device has a maximum R DS(on) of 160 mΩ and input gate charge in the hundreds ...

Researchers have developed a transistor technology that enables a single semiconductor device to perform ...

(Application Note) Here is a new Application Note from Nanosurf on conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts. Chemical-mechanical polishing (CMP) ...

Less than two decades after smartphones fit into the palm of our hands, artificial intelligence is now running on devices worn on our wrists. The challenge is that while devices continue to shrink, ...

The post Samsung is breaking transistor production wide open by going 3D appeared first on Android Headlines.

Transistors in some circuit configurations work together and, frequently, need to be matched. This is so common that you can sometimes find ICs that are just a pair of transistors made with the same ...

Researchers at Pohang University of Science & Technology (POSTECH) developed a zinc oxide (ZnO) and tellurium (Te) ...

Laser probing remains invaluable to the semiconductor industry for isolating and diagnosing defects in silicon transistors in integrated circuits during electrical stress tests. However, continuous ...

Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.

POSTECH develops a low-temperature heterojunction-based transistor that implements complex circuits with a single device.