Patients with V30M in endemic areas experienced the earliest onset and shortest diagnostic delay. Hereditary amyloid cardiomyopathy (hATTR) mostly manifests as transthyretin amyloid polyneuropathy ...
Researchers from University of Science and Technology of China (USTC) have achieved dynamic junction temperature (T j) mapping of a vertical GaN PiN diode during extreme stress transients up to 10000 ...
The DK5V100R15S from Shenzhen DongKe Semiconductor provides a compelling and drop-in alternative to Schottky rectifiers. In power electronics, minimizing switching losses and improving thermal ...
Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...
For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster ...
1 Department of Urology, Children's Hospital, Capital Institute of Pediatrics, Beijing, China 2 Department of Pathology, Children's Hospital, Capital Institute of Pediatrics, Beijing, China Objective: ...
Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China Nano Science and Technology ...
A detailed analysis of the I-V characteristics of a PN junction diode (1N4148) under different temperatures, utilizing Excel for graphical analysis and parameter extraction. This study was conducted ...
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Abstract: We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes ...
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